PART |
Description |
Maker |
CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
CM50TJ-24F |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
CM150DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
MIC915 MIC915BMM |
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN Dual 135MHz Low-Power Op Amp
|
Micrel Semiconductor,Inc.
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
FS75R07N2E4 FS75R07N2E4-13 |
Dual channel IGBT gate driver EconoPACK2 Modul mit Trench
|
Infineon Technologies AG Infineon Technologies A...
|
74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp. NXP SEMICONDUCTORS
|
HCTS20MS HCTS20D_SAMPLE HCTS20DMSR HCTS20HMSR HCTS |
NAND-Gate, 4-Input, TTL Inputs, Dual, Rad-Hard, High-Speed, CMOS, Logic Switch Boot; For Use With:Toggle Switches Radiation Hardened Dual 4-Input NAND Gate HCT SERIES, DUAL 4-INPUT NAND GATE, CDFP14
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|